(China (Mainland))
Product Summary
The K6R1016V1D-TI10 is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1016V1D-TI10 uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG s advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1016V1D-TI10 is packaged in a 400 mil 32-pin plastic SOJ.
Parametrics
K6R1016V1D-TI10 absolute maximum ratings: (1)Voltage on Any Pin Relative to VSS VIN, VOUT: -0.5 to Vcc+0.5VV; (2)Voltage on VCC Supply Relative to VSS VCC: -0.5 to 7.0 V; (3)Power Dissipation Pd: 1 W; (4)Storage Temperature TSTG: -65 to 150 ℃; (5)Operating Temperature Commercial TA: 0 to 70 ℃; (6)Industrial TA: -40 to 85 ℃; (7)Input Leakage Current ILI VIN=VSS to VCC: -2 to 2 μA.
Features
K6R1016V1D-TI10 features: (1)Fast Access Time 10ns(Max.); (2)Power Dissipation Standby (TTL): 20mA(Max.), (CMOS): 5mA(Max.), Operating K6R1004C1D-10: 65mA(Max.); (3)Single 5.0V±10% Power Supply; (4)TTL Compatible Inputs and Outputs; (5)I/O Compatible with 3.3V Device; (6)Fully Static Operation No Clock or Refresh required; (7)Three State Outputs; (8)Center Power/Ground Pin Configuration; (9)Operating in Commercial and Industrial Temperature range.
Diagrams
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